File information: | |
File name: | fdr4410.pdf [preview fdr4410] |
Size: | 220 kB |
Extension: | |
Mfg: | Fairchild Semiconductor |
Model: | fdr4410 🔎 |
Original: | fdr4410 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Fairchild Semiconductor fdr4410.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 17-05-2021 |
User: | Anonymous |
Multipart: | No multipart |
Information about the files in archive: | ||
Decompress result: | OK | |
Extracted files: | 1 | |
File name fdr4410.pdf April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost 9.3 A, 30 V. RDS(ON) = 0.013 @ VGS = 10 V alternative to the popular Si4410DY. RDS(ON) = 0.020 @ VGS = 4.5 V. The SuperSOTTM-8 package is 40% smaller than the SO-8 High density cell design for extremely low RDS(ON). package. Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability. The SuperSOTTM-8 advanced package design and optimized pinout allow the typical power dissipation to be similar to the bigger SO-8 package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S 5 4 D D S 6 3 10 44 7 2 G D D 8 1 TM pin 1 D SuperSOT -8 Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter FDR4410 Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage |
Date | User | Rating | Comment |